Our service areas:
Integrated circuits
Power ICs:
frequency up to 2 MHz, current up to 10A, voltage up to 100V
Digital ICs:
частота до 800 МГц,
разрядность до 64 бит
Analog ICs:
bit depth up to 24 bits, current up to 2A, voltage up to 75V
Semiconductor devices
RF devices:
frequency up to 5 GHz, voltage up to 75V, current up to 50А, power up to 1000 W
Power devices:
voltage up to 450V, current up to 100A
Switching devices:
voltage up to 100 V, frequency up to 3 MHz
Secondary power sources
Number of channels - 2, voltages and currents generated up to 100V, 14A
Switching products
ultimate stress, V – VMAX ≥ 100;
frequency range 10 kHz – 3 MHz
contact resistance, mOhm – RCONT ≤ 10
switching current up to 20 A;
insulation resistance from 100 MOhm;
Resistors
nominal resistance from 0,1 Ohm to 1000 MOhm;
nominal rating power up to 50 W;
maximum voltage up to 100 V;
operational current up to 5 А;
Chokes and inductors
DC winding resistance from 0,01 Оhm to 10 kОhm;
winding inductance from 0,1 nH to 1000 mH;
operating current up to 10 А;
operating voltage up to 1000 V;
Capacitors
nominal capacitance from 0,1 pF to 10000 μF;
operating voltage up to 1000 V;
Optoelectronic devices
Optocouplers, optoelectronic ICs: switching current up to 1A, switching voltage up to 100V
RF modules
frequency range - up to 5 GHz
supply voltage - up to 60 V
current – up to 50 A
output power– up to 1000 W;
Fuses, dischargers, filters
operating voltage up to 1000 V;
rated current up to 20 A;
bandwidth up to 3 MHz;
Commutators
switching voltage up to 1500 V
switching current up to 20 A;
insulation resistance from 100 MOhm;
contact resistance from 0,01 mOhm;
operating frequency up to 3 MHz;
Electrical connectors, electrical installation and connection products
switching voltage up to 1000 V;
switching current up to 20 A;
insulation resistance from 100 MOhm;
contact resistance from 0,01 mOhm;
List of services offered by the solid state RF electronics, semiconductor devices and RF equipment design center:
Failure/defect analysis of semiconductor devices.
Measurement of transistors’ electrical parameters during design and mass production.
Surface element composition analysis using a microanalyzer.
Electrical parameter analysis of foreign and domestic transistors for advanced research purposes.
Contacts:
We are ready to answer all your questions as soon as possible! You can send a message on e-mail p.parmon@niiet.ru or call by phone: +7 (473) 280-23-12
