2P9103A

Productions / Power, HF/SHF electronics / Linear LDMOS transistors / 2P9103A

Main characteristics:
• Measurement conditions: f1= 860 MHz, f2 = 860,1 MHz, Vsd= 32 V
• Output power Pout -45 W
• Power amplification factor PAF -16 dB
• Drain efficiency ηС – 40%
• Intermodulation distortion coefficient M3 – minus 25 dB.

The transistor is designed for use in radio communication equipment with high linearity requirements, as well as in broadcasting stations
• Frequency range up to 1000 MHz
• Low level of intermodulation distortion

Description

Applicable scope: Telecommunications equipment, radio communication equipment with high linearity requirements

 

Maximum permissible electrical operating conditions:

Parameter                                                                                        Parameter designation      Value

________________________________________________________________________________________________

Maximum permissible constant voltage gate-drain, V                                            Vgd max                        201)

Maximum permissible constant voltage source-drain, V                                         Vsd max                        601)

Maximum permissible average power dissipation in dynamic condition, W          Pav max                         32,52)

Maximum permissible continuous drain current, A                                                 Ic, max                           1,1

Operating-temperature range, 0C                                                                            tm min (medium)          -60

                                                                                                                                  tp max (package)         +125

Maximum permissible transition temperature, 0C                                                    tt max                             180

Thermal junction-to-package resistance, 0C/Wt                                                             Rt c-r                              4,7

Electrical parameters

Parameter                                                                                       Parameter designation      Value

Forward transconductance (lc =0,6 A, Vsd =10V) A/V                                          S                     0,6 (min)

Source-drain resistance on impedance (lc =0,6 A, Vgd =10V), Ohm               Rsd imp              0,83 (st)

Input capacity (f=1 MHz, Vsd= 32V), pF                                                          C11i                  17,6 (st)

Reverse transfer capacitance (f=1 MHz, Vsd= 32V), pF                                   C12i                   0,27 (st)

Output capacity (f=1 MHz, Vsd= 32V), pF                                                       C22i                   10,4 (st)