2P9103B

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2p9103b

Main characteristics:
• Measurement conditions: f1= 860 MHz, f2 = 860,1 MHz, Vsd= 32 V
• Output power Pout -45 W
• Power amplification factor PAF -16 dB
• Drain efficiency ηС – 40%
• Intermodulation distortion coefficient M3 – minus 25 dB.

The transistor is designed for use in radio communication equipment with high linearity requirements, as well as in broadcasting stations
• Frequency range up to 1000 MHz
• Low level of intermodulation distortion
• KT-55S-1 ceramic package

Description

Application area: Telecommunications equipment, radio communication equipment with high linearity requirements

Maximum permissible electrical operating conditions:

Parameter                                                                                        Parameter designation      Value

________________________________________________________________________________________________

Maximum permissible constant voltage gate-drain, V                                            Vgd max                        201)

Maximum permissible constant voltage source-drain, V                                         Vsd max                        601)

Maximum permissible average power dissipation in dynamic condition, W          Pav max                         672)

Maximum permissible continuous drain current, A                                                 Ic, max                           3,3

Operating-temperature range, 0C                                                                            tm min (medium)          -60

                                                                                                                                  tp max (package)         +125

Maximum permissible transition temperature, 0C                                                    tt max                             180

Thermal junction-to-package resistance, 0C/W                                                             Rt c-r                              2,3

1) For the entire range of operating temperatures
2) At the package temperature tp < 25 0C

Electrical parameters

 

Parameter                                                                                       Parameter designation      Value

Forward Transconductance (lc =2 A, Vsd =10V) A/V                                          S                       1,7 (min)

Source-drain resistance on impedance (lc =1 A, Vgd =10V), Ohm               Rsd imp                 0,28 (st)

Input capacity (f=1 MHz, Vsd= 32V), pF                                                          C11i                  48,3 (st)

Reverse transfer capacitance (f=1 MHz, Vsd= 32V), pF                                   C12i                   1,0 (st)

Output capacity (f=1 MHz, Vsd= 32V), pF                                                       C22i                   28,9 (st)