Power GaN transistors

Productions / Power, HF/SHF electronics / Power GaN transistors

TNG-K 10030
The device is currently undergoing testing to determine the main parameters. The data presented here may be refined over time.

TNG-K 10030P
The device is currently undergoing testing to determine the main parameters. The data presented here may be refined over time.

TNG-K 20020
The device is currently undergoing testing to determine the main parameters. The data presented here may be refined over time.

TNG-K 20020P
The device is currently undergoing testing to determine the main parameters. The data presented here may be refined over time.

TNG-K 20040
The device is currently undergoing testing to determine the main parameters. The data presented here may be refined over time.

TNG-K 20040P
The device is currently undergoing testing to determine the main parameters. The data presented here may be refined over time.

TNG-К 65005
The transistor is designed for use in radio communication equipment with high linearity requirements, as well as in broadcasting stations

TNG-К 65005P
GaN power transistor for operation in key mode. Available in SMD-1 ceramic package or in DFN8L plastic package (10x10). Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V)

TNG-K 65010
GaN power transistor for operation in key mode. Available in SMD-1 ceramic package. Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-K 65010P
GaN power transistor for operation in key mode. Available in DFN8L plastic package (10x10). Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-К 65020
GaN power transistor for operation in key mode. Available in SMD-1 ceramic package. Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-К 65020P
GaN power transistor for operation in key mode. Available in DFN8L plastic package (10x10). Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-K 65030
GaN power transistor for operation in key mode. Available in SMD-1 ceramic package. Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-K 65030P
GaN power transistor for operation in key mode. Available in DFN8L plastic package (10x10). Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-К 65050
GaN power transistor for operation in key mode. Available in SMD-2 ceramic package. Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).

TNG-К 65050P
GaN power transistor for operation in key mode. Available in DFN8L plastic package (10x10). Fast and controllable ramp-up and ramp-down times. Relaxed gate driver requirements (0V to 6V).