Parameter

Designation

Value

Unit

Maximum allowable direct drain-source voltage

V_{ds max}

200

V

Maximum direct drain current

I_{d max}

40

A

Maximum permissible junction temperature

T_{j max}

150

°С

Operating temperature range

-55 to 150

°С

Thermal resistance of junction-transistor body*

R_{t j-b}

0,5

°С/W

Parameter

Designation

Value

Unit

Measurement mode

Min.

Typ.

Мах.

Breakdown voltage drain-source

V_{ds max}

200

V

V_gs = 0 V,

I_ds.off = 35 uA

Threshold voltage

V_thr

1

1.15

2.7

V

V_ds = V_gs, I_d = 6 mA

Gate leakage current

I_{g off}

210

400

uA

V_gs = 6 V, V_ds = 0 V

Initial drain current

I_{d. in}

70

140

uA

V_gs = 6 V, V_ds = 200 V

Open drain-source resistance

R_{ds on}

50

mOhm

V_gs = 6 V,

I_ds = 16 A

Input capacity

C₁₁

392

pF

V_ds = 200 V,

V_gs = 0 V,

f = 1 MHz

Output capacitance

C₂₂

166

pF

Flow-through capacity

C₁₂

6

pF

Gate Charge

Q_З

10,3

nC

V_gs = 0 to 6 V,

V_ds = 50 V

Gate - Source Charge

Q_gs

5,2

nC

Gate - Drain Charge

Q_gd

2,9

nC