TNG-K 65005

TNG-K 65005
GaN power transistor for operation in key mode
Available in SMD-1 ceramic package
Fast and controllable ramp-up and ramp-down times
Relaxed gate driver requirements (0V to 6V)

Description

Application area: charging units for various gadgets, electric cars, electric motor control systems, systems for converting electrical energy for alternative sources (solar batteries, wind generators), power supply systems for wireless devices and spacecraft, robotics, medical devices etc. 

Main parameters:
Maximum allowable drain-source voltage VDS = 650 V
Maximum direct drain current ID = 5 А
Open drain-source resistance RDS ON = 300 мОм

Maximum permissible values of electrical operation modes

Parameter

Designation

Value

Unit

Maximum allowable direct drain-source voltage

Vds max

650

V

Maximum direct drain current

Id max

5

A

Maximum permissible junction temperature

Tj max

150

°С

Operating temperature range

 

-55 to 150

°С

Thermal resistance of junction-transistor body*

Rt j-b

0,5

°С/W

Electrical characteristics (at 25 °C ambient temperature)

Parameter

Designation

Value

Min.

Typ.

Мах.

Breakdown voltage drain-source

Vds max

650

 

 

Threshold voltage

Vthr

1

1.15

2.7

Gate leakage current

Ig off

 

20

200

Initial drain current

Id. in

 

40

140

Open drain-source resistance

Rds on

 

300

 

Input capacity

C11

 

26

 

Output capacitance

C22

 

7

 

Flow-through capacity

C12

 

1

 

Gate Charge

QЗ

 

0,8

 

Gate - Source Charge

Qgs

 

0,3

 

Gate - Drain Charge

Qgd

 

0,3