TNG-K 65030P

TNG-K 65030P
GaN power transistor for operation in key mode
Available in SMD-1 ceramic package or in DFN8L plastic package (10x10)
Fast and controllable ramp-up and ramp-down times
Relaxed gate driver requirements (0V to 6V)

Description

Application area: charging units for various gadgets, electric cars, electric motor control systems, systems for converting electrical energy for alternative sources (solar batteries, wind generators), power supply systems for wireless devices and spacecraft, robotics, medical devices etc. 

Main parameters:
Maximum allowable drain-source voltage VDS = 650 V
Maximum direct drain current ID = 30 А
Open drain-source resistance RDS ON = 50 мОм

Maximum permissible values of electrical operation modes

Parameter

Designation

Value

Maximum allowable direct drain-source voltage

Vds max

650

Maximum direct drain current

Id max

30

Maximum permissible junction temperature

Tj max

150

Operating temperature range

 

-55 to 150

Thermal resistance of junction-transistor body*

Rt j-b

0,5

Electrical characteristics

Parameter

Designation

Value

Min.

Typ.

Мах.

Breakdown voltage drain-source

Vds max

650

 

 

Threshold voltage

Vthr

1

1.15

2.7

Gate leakage current

Ig off

 

120

400

Initial drain current

Id. in

 

10

150

Open drain-source resistance

Rds on

 

50

 

Input capacity

C11

 

421.5

 

Output capacitance

C22

 

107

 

Flow-through capacity

C12

 

2.4

 

Gate Charge

QЗ

 

12

 

Gate - Source Charge

Qgs

 

6.2

 

Gate - Drain Charge

Qgd

 

2.7