2P9123A

Productions / Power, HF/SHF electronics / Linear LDMOS transistors / 2P9123A

Main characteristics:
• Measurement conditions: f1= 860 MHz, f2 = 860,1 MHz, Vsd= 28 V
• Output power Pout -0,5 W
• Power amplification factor PAF -18 dB
• Drain efficiency ηС – 40%
• Intermodulation distortion coefficient M3 – minus 30 dB.

The transistor is designed for use in radio communication equipment with high linearity requirements, as well as in broadcasting stations
• Frequency range up to 1000 MHz
• Low level of intermodulation distortion
• КТ-81S ceramic package

Description

Applicable scope: Telecommunications equipment, radio communication equipment with high linearity requirements

Maximum permissible electrical operating conditions:

Parameter                                                                                        Parameter designation      Value

________________________________________________________________________________________________

Maximum permissible constant voltage gate-drain, V                                                Vgd max                        151)

Maximum permissible constant voltage source-drain, V                                             Vsd max                        601)

Maximum permissible average power dissipation in dynamic condition, W              Pav max                         9,32)

Maximum permissible continuous drain current, A                                                     Ic, max                          0,4

Operating-temperature range, 0C                                                                                tm min (medium)          -60

                                                                                                                                     tp max (package)         +125

Maximum permissible transition temperature, 0C                                                       tt max                             180

Thermal junction-to-package resistance, 0C/W                                                                Rt c-r                              15

 

1) For the entire range of operating temperatures
2) At the package temperature tp < 25 0C

Electrical parameters

Parameter                                                                                       Parameter designation      Value

Forward Transconductance (lc =0,05 A, Vsd =10V) A/V                                        S                   0,038 (min)

Source-drain resistance on impedance (lc =0,05 A, Vgd =10V), Ohm               Rsd imp              11,5 (st)

Input capacity (f=1 MHz, Vsd= 28V), pF                                                          C11i                     2,7 (st)

Reverse transfer capacitance (f=1 MHz, Vsd= 28 V), pF                                   C12i                     0,03 (st)

Output capacity (f=1 MHz, Vsd= 28 V), pF                                                       C22i                     1,7 (st)