2P9123V

Productions / Power, HF/SHF electronics / Linear LDMOS transistors / 2P9123V

Main characteristics:
• Measurement conditions: f1= 860 MHz, f2 = 860,1 MHz, Vsd= 28 V
• Output power Pout -100 Vt
• Power amplification factor PAF -16 dB
• Drain efficiency ηС – 40%
• Intermodulation distortion coefficient M3 – minus 30 dB.

The transistor is designed for use in radio communication equipment with high linearity requirements, as well as in broadcasting stations
• Frequency range up to 1000 MHz
• Low level of intermodulation distortion
• КТ-55A-1 ceramic package

Description

Applicable scope: Telecommunications equipment, radio communication equipment with high linearity requirements

Maximum permissible electrical operating conditions:

Parameter                                                                                        Parameter designation      Value

________________________________________________________________________________________________

Maximum permissible constant voltage gate-drain, V                                                Vgd max                        151)

Maximum permissible constant voltage source-drain, V                                             Vsd max                        1002)

                                                                                                                                                                          903)

Maximum permissible average power dissipation in dynamic condition, W              Pav max                         1554)

Maximum permissible continuous drain current, A                                                     Ic, max                           5,0

Operating-temperature range, 0C                                                                                tm min (medium)          -60

                                                                                                                                     tp max (package)         +125

Maximum permissible transition temperature, 0C                                                       tt max                             180

Thermal junction-to-package resistance, 0C/W                                                                Rt c-r                              0,9

 

1) For the entire range of operating temperatures
2) At the package temperature tp < 250 C
3) For the temperature -600 C
4) For the package temperature tp ≤ 250 C

Electrical parameters

Parameter                                                                                       Parameter designation      Value

Forward Transconductance (lc = 2 A, Vsd =10V) A/V                                        S                          3,65 (min)

Source-drain resistance on impedance (lc =2 A, Vgd =10V), Ohm               Rsd imp                   0,18 (st)

Input capacity (f=1 MHz, Vsd= 28V), pF                                                          C11i                     177 (st)

Reverse transfer capacitance (f=1 MHz, Vsd= 28V), pF                                   C12i                     1,5 (st)

Output capacity (f=1 MHz, Vsd= 28V), pF                                                       C22i                   60,5 (st)