Main working areas:

Mass production of semiconductor wafers  with RF bipolar transistor, RF MOSFET transistor, planar and pin diode, MIS capacitor and resistor dice

Technical characteristics:

Semiconductor plant with up to 4” wafer diameter and 2.0 µm process node.
The unique technological equipment, individual approach to each customer and high level of personnel qualifications allow us to provide services at the highest level.

Our separate activity are services for wafer processing on unique equipment:

Wafer thinning:

DTG 8440 Grinding Machine:
Standard grinding of 4” wafers down to 80 µm; 6” wafers down to 150 µm; 8” wafers down to 200 µm;
Taiko grinding of 8” wafers down to 50 µm;

Gold sputtering

Versalis fxP cluster set with a gold sputtering (PVD Au) module for 4” and 8”silicon wafers.

Deep Reactive-Ion Etching (DRIE) of Silicon

Versalis fxP cluster with Rapier (DRIE) module for Bosch process etching of 4” and 8”silicon wafers

As, B and P Ion implantation of silicon wafers

Vesuvius-5 Ion implantation machine.
Ion implantation of 4” and 6” wafers with boron (B), phosphorus (P), arsenic (As) with up to 90 keV energy;

Metal film magnetic sputtering

Oratoria-5 set
Magnetic sputtering of aluminum (Al), nichrome (NiCr), titanium (Ti), platinum (Pt) films, formation of platinum silicide (PtSi);

Contacts:

We are ready to answer all your questions as soon as possible. Please send us e-mail on yaburov@niiet.ru  or call by phone: +7(473) 280-22-94 Yaburov A.V.