Our service areas:
Integrated circuits
Our R&D center performs a full range of IC design works. The chip production for NIIET products is carried out by the best domestic and foreign plants. An entire school creating LSI, VLSI, DSP and ADC has been founded at our enterprise.
The company's partners are the leading domestic and foreign silicon foundries. Our design center has licenses and access to the technical support from the world's leading EDM software vendors which gives us the opportunity to design microcircuits and high-power RF transistors scaling down to 14 nm process node.
RF- transistors
Currently, our product line of RF components with less than 12 GHz frequency is being improved aiming for higher frequency range.
The main area in RF device design at this stage is development of transistor and power amplifier families for various applications. NIIET carries out a full range of works, starting with the preparation of technical specifications, designing circuit and layout solutions, and ending with pilot production and testing.
Services offered for solid-state RF electronics and equipment design:
Design of high-power RF semiconductor components:
Design of high-power RF components, i.e. LDMOS, DMOS and bipolar transistors including internally matched transistors
Design of high-power RF GaN transistors
Design of monolithic ICs
Design of power amplifiers at customer’s technical requirements, i.e.:
Design of hybrid RF power amplifier modules
Design of packaged RF power amplifier modules
Design of pallet-type RF power amplifier modules
Production of power amplifier samples
Design and manufacturing of testing stands.
Design of power semiconductor devices including:
Design of switching power GaN transistors