Voronezh-based Scientific Research Institute of Electronics (NIIET, a member of Element Group, MOEX: ELMT) has announced the release of new high-power GaN (gallium nitride) RF transistors designed for power amplifiers used in radio-electronic equipment. The development is engineered to operate under severe temperature and environmental conditions.
In terms of their combined technical specifications, the new TNG 131005-28 and TNG 60005-28P transistors have no equivalents on the Russian market. Both models are designed for a 28 V supply voltage and deliver an output power exceeding 10 W, but they differ in several key characteristics.
For instance, the primary goal in designing the TNG 131005-28 transistor was to ensure its operation in the Ku frequency band. The developers successfully achieved this, creating the first domestic discrete transistor capable of delivering a continuous output power of over 10 W at frequencies up to 13.5 GHz. Furthermore, the transistor demonstrates some of the best values for discrete packaged transistors, with a power gain of Kp ≥ 13 dB and an efficiency of up to 50%.
When designing the TNG 60005-28P transistor, the main objective was to reduce its physical dimensions and enable automated batch PCB assembly on surface-mount technology (SMT) lines while maintaining performance parameters at operating frequencies up to 6–8 GHz. This goal was successfully reached by designing a specific transistor structure and implementing its packaging into a 3×3 mm DFN3x3-6L metal-plastic package.
The TNG 60005-28P transistor is the most miniature domestic discrete transistor delivering an output power of over 10 W at frequencies up to 6–8 GHz. Due to lower parasitic capacitances and package inductances, this transistor provides superior frequency performance and higher gain (Kp ≥ 17.4 dB) compared to equivalents in ceramic-metal packages. Meanwhile, its efficiency of ≥ 56% matches the values provided by ceramic-metal transistors.
A significant advantage of both developments is a substantial voltage margin of up to 130 V. These features make the transistors highly sought after for key components in transmitters, radar stations, communication systems, and electronic warfare (EW) systems, where exceptionally high performance is a mandatory requirement.
The differences in design solutions between the two models reflect diverse technological approaches applied at NIIET. The TNG 131005-28 is housed in a traditional ceramic-metal package, which has proven to be a reliable solution for critical applications due to its efficient heat dissipation and resistance to environmental hazards. While the TNG 60005-28P is sealed in a plastic package. This option simplifies and reduces the cost of mass production while maintaining the necessary level of performance characteristics. Conducted research confirmed that the plastic design matches ceramic-metal equivalents in core specifications. This, in turn, opens up additional opportunities for scaling up production and expanding the use of plastic solutions in the segment of microwave GaN transistors with an output power of over 5 W.
The development of the GaN product line within the Element Group aligns with the strategic priorities of the domestic electronics industry. Gallium nitride technology is officially recognized as key under the Strategy for the Development of the Russian Electronics Industry until 2030, and our company’s work in this segment serves as a practical example of achieving these stated goals.
