A delegation from the Republic of Uzbekistan, headed by Ambassador Extraordinary and Plenipotentiary of the Republic of Uzbekistan to the Russian Federation Botirjon Asadov, visited the Voronezh Scientific Research Institute of Electronic Technology (NIIET, part of the Element Group of Companies, MOEX: ELMT).
The visit was an important step in strengthening scientific and technical cooperation between friendly countries and allowed guests from Central Asia to become acquainted with the institute’s history, main areas of activity, and cutting-edge developments.
The visit’s schedule was busy. NIIET General Director Pavel Pavlovich Kutsko led the tour. He introduced the guests to the institute’s products, such as gallium nitride-based RF transistors, emphasizing that the institute is currently the only enterprise in the country capable of mass-producing semiconductor devices using this technology. He also showcased a line of cutting-edge 32-bit RISC-V microcontrollers for various applications, developed using a subsidy under Russian Government Resolution No. 1252 of July 24, 2021.
The delegates visited NIIET’s testing center, which, among other modern equipment, operates proprietary units — the “SIT” series of rigs for thermal,electrical conditioning and reliability testing of electronic components, as well as an automatic thermal shock chamber. This equipment is not only used by the company itself but is also successfully sold to third-party customers both in Russia and abroad.
Much attention was paid to the die production facility, whose recent modernization now allows to manufacture modern electronic components, as well as to the assembly line of microchips and semiconductor devices, where capacity was created for the packaging of mass-produced civilian products, including one of NIIET’s most in-demand developments — the K1921VG015 32-bit ultra-low-power microcontroller.
The line also provides the ability to package microcontrollers, microprocessors, power converters, interface integrated circuits, power amplifier modules, silicon and gallium nitride RF transistors in the most popular types of metal-polymer packages — QFP, QFN, SOT, SOIC and TO.
Pavel Kutsko noted that many employees of the aforementioned facilities successfully defended their respective academic theses, and therefore possess extensive expertise in this area and already hold patents for certain packaging methods.
“Currently, all microelectronic companies that see increasing production volumes, and therefore expanding their production for the mass civilian market as the foundation for their growth, view plastic packaging as one of the most pressing areas. In the field of semiconductor devices, we are developing and manufacturing RF devices based on LDMOS technology, as well as power transistors and devices based on them. We also are primarily focused on the mass civilian market and developing new technologies,” he added. Pavel Kutsko explained that production facilities operatesix days a week in two shifts. Production volume has increased tenfold compared to previous years.
The guests highly appreciate the Voronezh enterprise’s production capacity, wide range of products, and the high level of professional training of its employees.
Representatives of the Uzbekistani side expressed interest in studying NIIET’s experience in production development and successfull implementation of civilian products, as well as mastering new technologies, emphasizing the importance of such meetings for strengthening bilateral communication and stimulating scientific and technological progress.
